App note: Gate drive characteristics and requirements for HEXFET power MOSFETs

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App note from International Rectifier on driving their Power MOSFETs. Link here (PDF)

The conventional bipolar transistor is a current-driven device. A current must be applied between the base and emitter terminals to produce a flow of current in the collector. The amount of a drive required to produce a given output depends upon the gain, but invariably a current must be made to flow into the base terminal to produce a flow of current in the collector.

The HEXFET®is fundamentally different: it is a voltage-controlled power MOSFET device. A voltage must be applied between the gate and source terminals to produce a flow of current in the drain. The gate is isolated electrically from the source by a layer of silicon dioxide. Theoretically, therefore, no current flows into the gate when a DC voltage is applied to it though in practice there will be an extremely small current, in the order of nanoamperes. With no voltage applied between the gate and source electrodes, the impedance between the drain and source terminals is very high, and only the leakage current flows in the drain.

from Dangerous Prototypes http://ift.tt/2uwDdPt

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